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OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope

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OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope

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Brand Name : CNOEC, OPTO-EDU

Model Number : A63.7190

Certification : CE, Rohs

Place of Origin : China

MOQ : 1 pc

Price : FOB $1~1000, Depend on Order Quantity

Payment Terms : T/T, West Union, Paypal

Supply Ability : 5000 pcs/ Month

Delivery Time : 5~20 Days

Packaging Details : Carton Packing, For Export Transportation

Wafer Size : A63.7190-68: 6/8 Inches

Resolution : 2.5nm (Acc=800V)

Accelerating Voltages : 0.5-1.6KV

Repeatability : Static & Dynamic ±1% or 3nm(3 Sigma)

Probe Beam Current : 3~30pA

Measuring Range : FOV 0.1~2.0μm

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  • Compatible With 6/8 Inch Wafers Size, Magnification 1000x-300000x
  • Resolution 2.5nm (Acc=800V), Accelerating Voltages 500V--1600V
  • Repeatability Static & Dynamic ±1% or 3nm(3 Sigma), Probe Beam Current 3~30pA
  • High-Speed Wafer Transfer System Design Suitable For 3rd-Generation Semiconductor Chips
  • Advanced Electron Optics Systems And Image Processing, Including Chiller, Dry pump
OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope
OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope

A Critical Dimension Scanning Electron Microscope (CD-SEM) is a specialized SEM used to measure the dimensions of tiny features on semiconductor wafers, photomasks, and other materials. These measurements are crucial for ensuring the accuracy and precision of manufactured electronic devices.

Compatible With 6/8 Inch Wafers Size, Magnification 1000x-300000x

Resolution 2.5nm (Acc=800V), Accelerating Voltages 500V--1600V

Repeatability Static & Dynamic ±1% or 3nm(3 Sigma), Probe Beam Current 3~30pA

High-Speed Wafer Transfer System Design Suitable For 3rd-Generation Semiconductor Chips

Advanced Electron Optics Systems And Image Processing, Including Chiller, Dry pump

OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope

Key Features

CD-SEMs use a low-energy electron beam and have enhanced magnification calibration to ensure accurate and repeatable measurements. They are designed to measure features like the width, height, and sidewall angles of patterns.

OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope

Purpose

CD-SEMs are essential for metrology in the semiconductor industry, helping to measure the critical dimensions (CDs) of patterns created during lithography and etching processes. CDs refer to the smallest feature sizes that can be reliably produced and measured on a wafer.

OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope

Applications

These instruments are used in the manufacturing lines of electronic devices to ensure the dimensional accuracy of the various layers and features that make up a chip. They also play a crucial role in process development and control, helping to identify and correct any issues that may arise during the manufacturing process.

Importance

Without CD-SEMs, modern microelectronics would struggle to achieve the high level of precision and performance that is demanded by the industry. They are indispensable for ensuring the reliability and functionality of modern electronic devices.

OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope

Shifting Technology

As lithography techniques advance and feature sizes continue to shrink, CD-SEMs are constantly evolving to meet the demands of the industry. New technologies and advancements in CD-SEM are being developed to address the challenges of measuring increasingly complex patterns

OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope
OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope
OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope
OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope
OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope
OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope
A63.7190 Critical Dimension Scanning Electron Microscope (CDSEM)
Wafer Size A63.7190-68: 6/8 Inches A63.7190-12: 12 Inches
Resolution 2.5nm (Acc=800V) 1.8nm (Acc-800V)
Accelerating Voltages 0.5-1.6KV 0.3-2.0KV
Repeatability Static & Dynamic ±1% or 3nm(3 Sigma) Static & Dynamic ±1% or 0.3nm(3 Sigma)
Probe Beam Current 3~30pA 3~40pA
Measuring Range FOV 0.1~2.0μm FOV 0.05~2.0μm
Throughput >20 Wafers/Hour, >36 Wafers/Hour,
1 Point/Chip, 1 Point/Chip,
20 Chips/Wafer 20 Chips/Wafer
Magnification 1Kx~300Kx 1Kx-500Kx
Stage Accuracy 0.5μm
Electron Source Schottky Thermal Field Emitter

Comparation of Main CDSEM Models on Market
Specification Hitachi Hitachi Hitachi Opto-Edu Opto-Edu
S8840 S9380 S9380 II A63.7190-68 A63.7190-12
1. Wafer Size 6inch/8inch 8inch/12inch 8inch/12inch 6inch/8inch 12inch
2. Resolution 5nm (Acc=800V) 2nm (Acc=800V) 2nm (Acc=800V) 2.5nm (Acc=800V) 1.8nm (Acc=800V)
3. Accelerating Voltage 500-1300V 300-1600V 300-1600V 500-1600V 300-2000V
4. Repeatability (static and dynamic) ±1% or 5nm(3 sigma) ±1% or 2nm(3 sigma) ±1% or 2nm(3 sigma) ±1% or 3nm(3 sigma) ±1% or 0.3nm(3 sigma)
5. Ip Range (Probe current) 1-16pA 3-50pA 3-50pA 3-30pA 3-40pA
6. FOV Size - 50nm-2um 0.05-2um 0.1-2um 0.05-2um
7.Througput 26 wafers/hour, 24 wafers/hour, 24 wafers/hour, >20wafers/hour, 36 wafers/hour,
1point/chip, 1point/chip, 1point/chip, 1point/chip, 1point/chip,
5chips/wafer 20chips/wafer 20chips/wafer 20chips/wafer 20chips/wafer

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