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OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope

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OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope

Name: OPTOEDU A637190 300000x Critical Dimension Scanning Electron Microscope
Brand: CNOEC, OPTO-EDU
Price: 1 USD

Buy cheap OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope product

Brand Name : CNOEC, OPTO-EDU

Model Number : A63.7190

Certification : CE, Rohs

Place of Origin : China

MOQ : 1 pc

Price : FOB $1~1000, Depend on Order Quantity

Payment Terms : T/T, West Union, Paypal

Supply Ability : 5000 pcs/ Month

Delivery Time : 5~20 Days

Packaging Details : Carton Packing, For Export Transportation

Wafer Size : A63.7190-68: 6/8 Inches

Resolution : 2.5nm (Acc=800V)

Accelerating Voltages : 0.5-1.6KV

Repeatability : Static & Dynamic ±1% or 3nm(3 Sigma)

Probe Beam Current : 3~30pA

Measuring Range : FOV 0.1~2.0μm

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Compatible With 6/8 Inch Wafers Size, Magnification 1000x-300000x
Resolution 2.5nm (Acc=800V), Accelerating Voltages 500V--1600V
Repeatability Static & Dynamic ±1% or 3nm(3 Sigma), Probe Beam Current 3~30pA
High-Speed Wafer Transfer System Design Suitable For 3rd-Generation Semiconductor Chips
Advanced Electron Optics Systems And Image Processing, Including Chiller, Dry pump

OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope

A Critical Dimension Scanning Electron Microscope (CD-SEM) is a specialized SEM used to measure the dimensions of tiny features on semiconductor wafers, photomasks, and other materials. These measurements are crucial for ensuring the accuracy and precision of manufactured electronic devices.

◉ Compatible With 6/8 Inch Wafers Size, Magnification 1000x-300000x

◉ Resolution 2.5nm (Acc=800V), Accelerating Voltages 500V--1600V

◉ Repeatability Static & Dynamic ±1% or 3nm(3 Sigma), Probe Beam Current 3~30pA

◉ High-Speed Wafer Transfer System Design Suitable For 3rd-Generation Semiconductor Chips

◉ Advanced Electron Optics Systems And Image Processing, Including Chiller, Dry pump

▶ Key Features

CD-SEMs use a low-energy electron beam and have enhanced magnification calibration to ensure accurate and repeatable measurements. They are designed to measure features like the width, height, and sidewall angles of patterns.

▶ Purpose

CD-SEMs are essential for metrology in the semiconductor industry, helping to measure the critical dimensions (CDs) of patterns created during lithography and etching processes. CDs refer to the smallest feature sizes that can be reliably produced and measured on a wafer.

▶ Applications

These instruments are used in the manufacturing lines of electronic devices to ensure the dimensional accuracy of the various layers and features that make up a chip. They also play a crucial role in process development and control, helping to identify and correct any issues that may arise during the manufacturing process.

▶ Importance

Without CD-SEMs, modern microelectronics would struggle to achieve the high level of precision and performance that is demanded by the industry. They are indispensable for ensuring the reliability and functionality of modern electronic devices.

▶ Shifting Technology

As lithography techniques advance and feature sizes continue to shrink, CD-SEMs are constantly evolving to meet the demands of the industry. New technologies and advancements in CD-SEM are being developed to address the challenges of measuring increasingly complex patterns

A63.7190 Critical Dimension Scanning Electron Microscope (CDSEM)
Wafer Size	A63.7190-68: 6/8 Inches	A63.7190-12: 12 Inches
Resolution	2.5nm (Acc=800V)	1.8nm (Acc-800V)
Accelerating Voltages	0.5-1.6KV	0.3-2.0KV
Repeatability	Static & Dynamic ±1% or 3nm(3 Sigma)	Static & Dynamic ±1% or 0.3nm(3 Sigma)
Probe Beam Current	3~30pA	3~40pA
Measuring Range	FOV 0.1~2.0μm	FOV 0.05~2.0μm
Throughput	>20 Wafers/Hour,	>36 Wafers/Hour,
	1 Point/Chip,	1 Point/Chip,
	20 Chips/Wafer	20 Chips/Wafer
Magnification	1Kx~300Kx	1Kx-500Kx
Stage Accuracy	0.5μm
Electron Source	Schottky Thermal Field Emitter

Comparation of Main CDSEM Models on Market
Specification	Hitachi	Hitachi	Hitachi	Opto-Edu	Opto-Edu
Specification	S8840	S9380	S9380 II	A63.7190-68	A63.7190-12
1. Wafer Size	6inch/8inch	8inch/12inch	8inch/12inch	6inch/8inch	12inch
2. Resolution	5nm (Acc=800V)	2nm (Acc=800V)	2nm (Acc=800V)	2.5nm (Acc=800V)	1.8nm (Acc=800V)
3. Accelerating Voltage	500-1300V	300-1600V	300-1600V	500-1600V	300-2000V
4. Repeatability (static and dynamic)	±1% or 5nm(3 sigma)	±1% or 2nm(3 sigma)	±1% or 2nm(3 sigma)	±1% or 3nm(3 sigma)	±1% or 0.3nm(3 sigma)
5. Ip Range (Probe current)	1-16pA	3-50pA	3-50pA	3-30pA	3-40pA
6. FOV Size	-	50nm-2um	0.05-2um	0.1-2um	0.05-2um
7.Througput	26 wafers/hour,	24 wafers/hour,	24 wafers/hour,	>20wafers/hour,	36 wafers/hour,
	1point/chip,	1point/chip,	1point/chip,	1point/chip,	1point/chip,
	5chips/wafer	20chips/wafer	20chips/wafer	20chips/wafer	20chips/wafer

OPTO-EDU A63.7190 300000x Critical Dimension Scanning Electron Microscope Images

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